THEORETICAL CONSIDERATIONS ON ION CHANNELING EFFECT THROUGH SILICIDE-SILICON INTERFACE

被引：34

作者：

ISHIWARA, H

SAITOH, S

HIKOSAKA, K

机构：

来源：

关键词：

D O I：

10.1143/JJAP.20.843

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：843 / 848

页数：6

共 14 条

[1] BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4
[2] INTERFACIAL ORDER IN EPITAXIAL NISI2
CHIU, KCR
POATE, JM
FELDMAN, LC
DOHERTY, CJ
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 544 - 547
[3] MOTION OF ENERGETIC PARTICLES IN CRYSTALS
DATZ, S
ERGINSOY, C
LEIBFRIE.G
LUTZ, HO
[J]. ANNUAL REVIEW OF NUCLEAR SCIENCE, 1967, 17 : 129 - +
[4] CHANNELED ION-IMPLANTATION THROUGH METALLIC-FILMS
HIKOSAKA, K
ISHIWARA, H
FURUKAWA, S
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1913 - 1916
[5] CHARACTERIZATION OF EPITAXIAL METAL SILICIDE FILMS GROWN ON SILICON
ISHIWARA, H
HIKOSAKA, K
NAGATOMO, M
FURUKAWA, S
[J]. SURFACE SCIENCE, 1979, 86 (JUL) : 711 - 717
[6] CHANNELING AND BACKSCATTERING STUDIES OF THE CRYSTALLINE PERFECTION AND THE THERMAL-STABILITY OF EPITAXIAL PTSI FILMS ON SI
ISHIWARA, H
HIKOSAKA, K
FURUKAWA, S
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) : 5302 - 5306
[7] STRUCTURE MODELING OF METAL-SILICIDE LAYERS BY USING AXIAL AND PLANAR CHANNELING TECHNIQUES
ISHIWARA, H
NAGATOMO, M
FURUKAWA, S
[J]. NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3): : 417 - 420
[8] Ishiwara H., 1980, P S THIN FILM INT I, P159
[9] LINDHARD J, 1965, KGL DANSKE VIDENSKAB, V34, P1
[10] PROFILING OF PERIODIC STRUCTURES (GAAS-GAAIAS) BY NUCLEAR BACKSCATTERING
MAYER, JW
ZIEGLER, JF
CHANG, LL
TSU, R
ESAKI, L
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (05) : 2322 - 2325