ION-BEAM-INDUCED EPITAXY IN THE PD-SI SYSTEM

被引：8

作者：

ISHIWARA, H

KUZUTA, N

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 07期

关键词：

D O I：

10.1063/1.92006

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：641 / 643

页数：3

共 10 条

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[5] CHANNELING AND BACKSCATTERING STUDIES OF THE CRYSTALLINE PERFECTION AND THE THERMAL-STABILITY OF EPITAXIAL PTSI FILMS ON SI [J].

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JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) :5302-5306

[6] CHANNELING STUDIES OF RADIATION-DAMAGE IN METAL-SILICIDES [J].

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[7]

Ishiwara H., 1980, P S THIN FILM INT I, P159

[8] DOUBLE HETEROEPITAXY IN THE SI (111)-COSI2-SI STRUCTURE [J].

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APPLIED PHYSICS LETTERS, 1980, 37 (02) :203-205

[9] ION-BEAM-INDUCED SILICIDE FORMATION [J].

TSAUR, BY ;

LIAU, ZL ;

MAYER, JW .

APPLIED PHYSICS LETTERS, 1979, 34 (02) :168-170

[10] ION-BEAM-INDUCED FORMATION OF THE PDSI SILICIDE [J].

TSAUR, BY ;

LAU, SS ;

MAYER, JW .

APPLIED PHYSICS LETTERS, 1979, 35 (03) :225-227

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