ION-BEAM-INDUCED FORMATION OF THE PDSI SILICIDE

被引：47

作者：

TSAUR, BY

LAU, SS

MAYER, JW

机构：

[1] California Institute of Technology, Pasadena

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 03期

关键词：

D O I：

10.1063/1.91103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Formation of PdSi has been obtained by implanting energetic Xe ions through a thin Pd (or Pd2Si) film on a Si substrate. The PdSi phase was found to form near the Pd2Si-Si interface from Rutherford backscattering measurements. Phase formation was confirmed by glancing-angle x-ray-diffraction analysis. Subsequent thermal annealing at 300-400°C resulted in successive growth of the phase. A uniform PdSi layer was obtained at the final stage of the annealing and exhibited a sheet resistivity of 18 μΩ cm.

引用

页码：225 / 227

页数：3

共 13 条

[1] CHARACTERIZATION OF SILICON METALLIZATION SYSTEMS USING ENERGETIC ION BACKSCATTERING
BORDERS, JA
PICRAUX, ST
[J]. PROCEEDINGS OF THE IEEE, 1974, 62 (09) : 1224 - 1231
[2] BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4
[3] PT2SI AND PTSI FORMATION WITH HIGH-PURITY PT THIN-FILMS
CANALI, C
CATELLANI, C
PRUDENZIATI, M
WADLIN, WH
EVANS, CA
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (01) : 43 - 45
[4] FORMATION OF NI AND PT SILICIDE 1ST PHASE - DOMINANT ROLE OF REACTION-KINETICS
CANALI, C
CATELLANI, F
OTTAVIANI, G
PRUDENZIATI, M
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (02) : 187 - 190
[5] THIN PT AND PD SILICIDE SCHOTTKY BARRIERS FOR SILICON SOLAR-CELLS
CANALI, C
CATELLANI, F
MANTOVANI, S
PRUDENZIATI, M
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (18) : 2481 - 2489
[6] GROWTH AND TRANSFORMATION OF PD2SI ON (111), (110) AND (100) SI
HUTCHINS, GA
SHEPELA, A
[J]. THIN SOLID FILMS, 1973, 18 (02) : 343 - 363
[7] ANALYSIS OF THIN-FILM STRUCTURES WITH NUCLEAR BACKSCATTERING AND X-RAY-DIFFRACTION
MAYER, JW
TU, KN
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (01): : 86 - 93
[8] OTTAVIANI G, COMMUNICATION
[9] FORMATION OF SI-ENRICHED METASTABLE COMPOUNDS IN THE PT-SI SYSTEM USING ION-BOMBARDMENT AND POST ANNEALING
TSAUR, BY
LIAU, ZL
MAYER, JW
[J]. PHYSICS LETTERS A, 1979, 71 (2-3) : 270 - 272
[10] ION-BEAM-INDUCED SILICIDE FORMATION
TSAUR, BY
LIAU, ZL
MAYER, JW
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (02) : 168 - 170

← 1 2 →