THIN PT AND PD SILICIDE SCHOTTKY BARRIERS FOR SILICON SOLAR-CELLS

被引：15

作者：

CANALI, C ^{[1
]}

CATELLANI, F ^{[1
]}

MANTOVANI, S ^{[1
]}

PRUDENZIATI, M ^{[1
]}

机构：

[1] UNIV MODENA,IST FIS,I-41100 MODENA,ITALY

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1977年 / 10卷 / 18期

关键词：

D O I：

10.1088/0022-3727/10/18/013

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2481 / 2489

页数：9

共 15 条

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ASHAR, KG .

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[2] REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES [J].

ANDREWS, JM ;

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SOLID-STATE ELECTRONICS, 1970, 13 (07) :1011-+

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[4]

BOWER RW, 1973, SOLID ST ELECTRON, V16, P14

[5] ALUMINUM-SILICON SCHOTTKY BARRIERS AND OHMIC CONTACTS IN INTEGRATED-CIRCUITS [J].

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (06) :538-544

[6] PRINCIPLES AND APPLICATIONS OF ION-BEAM TECHNIQUES FOR ANALYSIS OF SOLIDS AND THIN-FILMS [J].

CHU, WK ;

MAYER, JW ;

NICOLET, MA ;

BUCK, TM ;

AMSEL, G ;

EISEN, F .

THIN SOLID FILMS, 1973, 17 (01) :1-41

[7] ELECTRICAL AND MECHANICAL FEATURES OF PLATINUM SILICIDE-ALUMINUM REACTION [J].

HOSACK, HH .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (08) :3476-3485

[8]

HOVEL AJ, 1975, SEMICONDUCTORS SEMIM, V11

[9] METALLURGICAL PROPERTIES AND ELECTRICAL CHARACTERISTICS OF PALLADIUM SILICIDE-SILICON CONTACTS [J].

KIRCHER, CJ .

SOLID-STATE ELECTRONICS, 1971, 14 (06) :507-+

[10] ANALYSIS OF THIN-FILM STRUCTURES WITH NUCLEAR BACKSCATTERING AND X-RAY-DIFFRACTION [J].

MAYER, JW ;

TU, KN .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (01) :86-93

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