ALUMINUM-SILICON SCHOTTKY BARRIERS AND OHMIC CONTACTS IN INTEGRATED-CIRCUITS

被引：138

作者：

CARD, HC ^{[1
]}

机构：

[1] COLUMBIA UNIV,DEPT ELECT ENGN & COMP SCI,NEW YORK,NY 10027

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1976年 / 23卷 / 06期

关键词：

D O I：

10.1109/T-ED.1976.18449

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：538 / 544

页数：7

相关论文

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[7] CONDUCTANCE ASSOCIATED WITH INTERFACE STATES IN MOS TUNNEL STRUCTURES
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[8] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES
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[9] DIRECT CURRENTS THROUGH INTERFACE STATES IN METAL-SEMICONDUCTOR CONTACTS
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[10] EFFECT OF AN INTERFACIAL LAYER ON MINORITY-CARRIER INJECTION IN FORWARD-BIASED SILICON SCHOTTKY DIODES
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