THERMALLY-INDUCED CHANGES IN BARRIER HEIGHTS OF ALUMINUM CONTACTS TO PARA-TYPE AND NORMAL-TYPE SILICON

被引：27

作者：

CARD, HC ^{[1
]}

机构：

[1] UNIV MANCHESTER INST SCI & TECHNOL,DEPT ELECT ENGN & ELECTR,SACKVILLE ST,MANCHESTER M60 1QD,ENGLAND

来源：

SOLID STATE COMMUNICATIONS | 1975年 / 16卷 / 01期

关键词：

D O I：

10.1016/0038-1098(75)90796-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：87 / 89

页数：3

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