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POTENTIAL BARRIERS TO ELECTRON TUNNELLING IN ULTRATHIN FILMS OF SIO2
被引:51
作者
:
CARD, HC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MANCHESTER,INST SCI & TECHNOL,DEPT ELECT ENGN & ELECTR,SACKVILLE ST,MANCHESTER 1,ENGLAND
UNIV MANCHESTER,INST SCI & TECHNOL,DEPT ELECT ENGN & ELECTR,SACKVILLE ST,MANCHESTER 1,ENGLAND
CARD, HC
[
1
]
机构
:
[1]
UNIV MANCHESTER,INST SCI & TECHNOL,DEPT ELECT ENGN & ELECTR,SACKVILLE ST,MANCHESTER 1,ENGLAND
来源
:
SOLID STATE COMMUNICATIONS
|
1974年
/ 14卷
/ 10期
关键词
:
D O I
:
10.1016/0038-1098(74)90414-1
中图分类号
:
O469 [凝聚态物理学];
学科分类号
:
070205 ;
摘要
:
引用
收藏
页码:1011 / 1014
页数:4
相关论文
共 16 条
[1]
DETERMINATION OF PROPERTIES OF FILMS ON SILICON BY METHOD OF ELLIPSOMETRY
ARCHER, RJ
论文数:
0
引用数:
0
h-index:
0
ARCHER, RJ
[J].
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA,
1962,
52
(09)
: 970
-
&
[2]
BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS
[3]
CONDUCTANCE ASSOCIATED WITH INTERFACE STATES IN MOS TUNNEL STRUCTURES
CARD, HC
论文数:
0
引用数:
0
h-index:
0
CARD, HC
RHODERICK, EH
论文数:
0
引用数:
0
h-index:
0
RHODERICK, EH
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(09)
: 993
-
+
[4]
STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES
CARD, HC
论文数:
0
引用数:
0
h-index:
0
CARD, HC
RHODERICK, EH
论文数:
0
引用数:
0
h-index:
0
RHODERICK, EH
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1971,
4
(10)
: 1589
-
+
[5]
EFFECT OF AN INTERFACIAL LAYER ON MINORITY-CARRIER INJECTION IN FORWARD-BIASED SILICON SCHOTTKY DIODES
CARD, HC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MANCHESTER, INST SCI & TECHNOL, DEPT ELECTR ENGN & ELECTR, MANCHESTER, LANCASTERSHIRE, ENGLAND
UNIV MANCHESTER, INST SCI & TECHNOL, DEPT ELECTR ENGN & ELECTR, MANCHESTER, LANCASTERSHIRE, ENGLAND
CARD, HC
RHODERICK, EH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MANCHESTER, INST SCI & TECHNOL, DEPT ELECTR ENGN & ELECTR, MANCHESTER, LANCASTERSHIRE, ENGLAND
UNIV MANCHESTER, INST SCI & TECHNOL, DEPT ELECTR ENGN & ELECTR, MANCHESTER, LANCASTERSHIRE, ENGLAND
RHODERICK, EH
[J].
SOLID-STATE ELECTRONICS,
1973,
16
(03)
: 365
-
374
[6]
NON-EQUILIBRIUM EFFECTS ON METAL-OXIDE-SEMICONDUCTOR TUNNEL CURRENTS
CLARKE, RA
论文数:
0
引用数:
0
h-index:
0
CLARKE, RA
SHEWCHUN, J
论文数:
0
引用数:
0
h-index:
0
SHEWCHUN, J
[J].
SOLID-STATE ELECTRONICS,
1971,
14
(10)
: 957
-
&
[7]
Grove A S, 1967, PHYS TECHNOLOGY SEMI
[8]
SPACE-CHARGE DEPENDENCE OF BARRIER HEIGHT ON INSULATOR THICKNESS IN AL-(AL-OXIDE)-AL SANDWICHES
GUNDLACH, KH
论文数:
0
引用数:
0
h-index:
0
GUNDLACH, KH
KADLEC, J
论文数:
0
引用数:
0
h-index:
0
KADLEC, J
[J].
APPLIED PHYSICS LETTERS,
1972,
20
(11)
: 445
-
&
[9]
HEIMAN FP, 1964, THESIS PRINCETON U
[10]
INFLUENCE OF NON-UNIFORM THICKNESS OF DIELECTRIC LAYERS ON CAPACITANCE AND TUNNEL CURRENTS
HURYCH, Z
论文数:
0
引用数:
0
h-index:
0
HURYCH, Z
[J].
SOLID-STATE ELECTRONICS,
1966,
9
(10)
: 967
-
&
←
1
2
→
共 16 条
[1]
DETERMINATION OF PROPERTIES OF FILMS ON SILICON BY METHOD OF ELLIPSOMETRY
ARCHER, RJ
论文数:
0
引用数:
0
h-index:
0
ARCHER, RJ
[J].
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA,
1962,
52
(09)
: 970
-
&
[2]
BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS
[3]
CONDUCTANCE ASSOCIATED WITH INTERFACE STATES IN MOS TUNNEL STRUCTURES
CARD, HC
论文数:
0
引用数:
0
h-index:
0
CARD, HC
RHODERICK, EH
论文数:
0
引用数:
0
h-index:
0
RHODERICK, EH
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(09)
: 993
-
+
[4]
STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES
CARD, HC
论文数:
0
引用数:
0
h-index:
0
CARD, HC
RHODERICK, EH
论文数:
0
引用数:
0
h-index:
0
RHODERICK, EH
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1971,
4
(10)
: 1589
-
+
[5]
EFFECT OF AN INTERFACIAL LAYER ON MINORITY-CARRIER INJECTION IN FORWARD-BIASED SILICON SCHOTTKY DIODES
CARD, HC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MANCHESTER, INST SCI & TECHNOL, DEPT ELECTR ENGN & ELECTR, MANCHESTER, LANCASTERSHIRE, ENGLAND
UNIV MANCHESTER, INST SCI & TECHNOL, DEPT ELECTR ENGN & ELECTR, MANCHESTER, LANCASTERSHIRE, ENGLAND
CARD, HC
RHODERICK, EH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MANCHESTER, INST SCI & TECHNOL, DEPT ELECTR ENGN & ELECTR, MANCHESTER, LANCASTERSHIRE, ENGLAND
UNIV MANCHESTER, INST SCI & TECHNOL, DEPT ELECTR ENGN & ELECTR, MANCHESTER, LANCASTERSHIRE, ENGLAND
RHODERICK, EH
[J].
SOLID-STATE ELECTRONICS,
1973,
16
(03)
: 365
-
374
[6]
NON-EQUILIBRIUM EFFECTS ON METAL-OXIDE-SEMICONDUCTOR TUNNEL CURRENTS
CLARKE, RA
论文数:
0
引用数:
0
h-index:
0
CLARKE, RA
SHEWCHUN, J
论文数:
0
引用数:
0
h-index:
0
SHEWCHUN, J
[J].
SOLID-STATE ELECTRONICS,
1971,
14
(10)
: 957
-
&
[7]
Grove A S, 1967, PHYS TECHNOLOGY SEMI
[8]
SPACE-CHARGE DEPENDENCE OF BARRIER HEIGHT ON INSULATOR THICKNESS IN AL-(AL-OXIDE)-AL SANDWICHES
GUNDLACH, KH
论文数:
0
引用数:
0
h-index:
0
GUNDLACH, KH
KADLEC, J
论文数:
0
引用数:
0
h-index:
0
KADLEC, J
[J].
APPLIED PHYSICS LETTERS,
1972,
20
(11)
: 445
-
&
[9]
HEIMAN FP, 1964, THESIS PRINCETON U
[10]
INFLUENCE OF NON-UNIFORM THICKNESS OF DIELECTRIC LAYERS ON CAPACITANCE AND TUNNEL CURRENTS
HURYCH, Z
论文数:
0
引用数:
0
h-index:
0
HURYCH, Z
[J].
SOLID-STATE ELECTRONICS,
1966,
9
(10)
: 967
-
&
←
1
2
→