NON-EQUILIBRIUM EFFECTS ON METAL-OXIDE-SEMICONDUCTOR TUNNEL CURRENTS

被引：61

作者：

CLARKE, RA

SHEWCHUN, J

机构：

来源：

SOLID-STATE ELECTRONICS | 1971年 / 14卷 / 10期

关键词：

D O I：

10.1016/0038-1101(71)90165-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：957 / &

共 28 条

[1] PHOSPHOSILICATE GLASS STABILIZATION OF FET DEVICES [J].

BALK, P ;

ELDRIDGE, JM .

PROCEEDINGS OF THE IEEE, 1969, 57 (09) :1558-+

[2] TUNNELLING FROM A MANY-PARTICLE POINT OF VIEW [J].

BARDEEN, J .

PHYSICAL REVIEW LETTERS, 1961, 6 (02) :57-&

[3]

BENDANIEL DJ, 1966, PHYS REV, V152, P688

[4]

Busch G., 1963, PHYS KONDENS MATER, V1, P367

[5] TUNNELING IN METAL-OXIDE-SILICON STRUCTURES [J].

DAHLKE, WE ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1967, 10 (08) :865-&

[6] BARRIER ENERGIES IN METAL-SILICON DIOXIDE-SILICON STRUCTURES [J].

DEAL, BE ;

SNOW, EH ;

MEAD, CA .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (11-1) :1873-&

[7]

DUKE CB, 1969, TUNNELING SOLIDS, P59

[8] SPACE-CHARGE-LIMITED TUNNEL EMISSION INTO AN INSULATING FILM [J].

GEPPERT, DV .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (10) :2993-&

[9] SURFACE STATES IN SILICON FROM CHARGES IN OXIDE COATING [J].

GOETZBERGER, A ;

HEINE, V ;

NICOLLIAN, EH .

APPLIED PHYSICS LETTERS, 1968, 12 (03) :95-+

[10]

GOOD RH, 1956, HDB PHYSIK, V21

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