NON-EQUILIBRIUM EFFECTS ON METAL-OXIDE-SEMICONDUCTOR TUNNEL CURRENTS

被引：61

作者：

CLARKE, RA

SHEWCHUN, J

机构：

来源：

SOLID-STATE ELECTRONICS | 1971年 / 14卷 / 10期

关键词：

D O I：

10.1016/0038-1101(71)90165-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：957 / &

共 28 条

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