CHEMICAL AND ELECTRONIC-PROPERTIES OF THE AG/GASB(110) INTERFACE FORMED AT ROOM AND LOW-TEMPERATURE

被引：20

作者：

MAO, D ^{[1
]}

KAHN, A ^{[1
]}

SOONCKINDT, L ^{[1
]}

机构：

[1] UNIV MONTPELLIER 2,ETUD SURFACES INTERFACES & COMPOSANTS LAB,F-34060 MONTPELLIER,FRANCE

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.40.5579

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5579 / 5587

页数：9

共 33 条

[1] INTERFACE GROWTH WITH ATOMS AND PREFORMED CLUSTERS - MORPHOLOGY AND SCHOTTKY-BARRIER VARIATIONS FOR AU/INP(110) [J].

ALDAO, CM ;

VITOMIROV, IM ;

WADDILL, GD ;

WEAVER, JH .

APPLIED PHYSICS LETTERS, 1988, 53 (26) :2647-2649

[2] GAAS(110)-AL INTERFACES FORMED AT LOW-TEMPERATURE [J].

BONAPACE, CR ;

LI, K ;

KAHN, A .

JOURNAL DE PHYSIQUE, 1984, 45 (NC-5) :409-418

[3] ELECTRON-ENERGY LOSS SPECTROSCOPY FROM GAAS(110) INTERFACES [J].

BONAPACE, CR ;

TU, DW ;

LI, K ;

KAHN, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1099-1102

[4] A STUDY OF OXYGEN INTERACTION WITH GASB CLEAVED SURFACES BY WORK FUNCTION AND PHOTOVOLTAGE MEASUREMENTS [J].

BONNET, J ;

SOONCKINDT, L ;

ISMAIL, A ;

LASSABATERE, L .

THIN SOLID FILMS, 1987, 151 (01) :103-110

[5] TEMPERATURE EFFECTS AT THE SB GAAS(110) INTERFACE [J].

CAO, R ;

MIYANO, K ;

KENDELEWICZ, T ;

LINDAU, I ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :1571-1572

[6] KINETICS STUDY OF INITIAL-STAGE BAND BENDING AT METAL GAAS(110) INTERFACES [J].

CAO, R ;

MIYANO, K ;

KENDELEWICZ, T ;

CHIN, KK ;

LINDAU, I ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :998-1002

[7] EVIDENCE FOR 2 PINNING MECHANISMS WITH NOBLE-METALS ON INP(110) [J].

CAO, R ;

MIYANO, K ;

LINDAU, I ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :861-864

[8] PHOTOEMISSION STUDY OF AU SCHOTTKY-BARRIER FORMATION ON GASB, GAAS, AND INP USING SYNCHROTRON RADIATION [J].

CHYE, PW ;

LINDAU, I ;

PIANETTA, P ;

GARNER, CM ;

SU, CY ;

SPICER, WE .

PHYSICAL REVIEW B, 1978, 18 (10) :5545-5559

[9]

FEENSTRA RM, IN PRESS J VAC SCI T

[10] FORMATION OF SCHOTTKY BARRIERS ON GAAS(110) - FROM ADSORBATE-INDUCED GAP STATES TO INTERFACE METALLICITY [J].

KAHN, A ;

STILES, K ;

MAO, D ;

HORNG, SF ;

YOUNG, K ;

MCKINLEY, J ;

KILDAY, DG ;

MARGARITONDO, G .

JOURNAL OF ELECTRONIC MATERIALS, 1989, 18 (01) :33-37

← 1 2 3 4 →