FORMATION OF SCHOTTKY BARRIERS ON GAAS(110) - FROM ADSORBATE-INDUCED GAP STATES TO INTERFACE METALLICITY

被引：5

作者：

KAHN, A

STILES, K

MAO, D

HORNG, SF

YOUNG, K

MCKINLEY, J

KILDAY, DG

MARGARITONDO, G

机构：

[1] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706

[2] UNIV WISCONSIN,CTR SYNCHROTRON RADIAT,MADISON,WI 53706

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1989年 / 18卷 / 01期

关键词：

D O I：

10.1007/BF02655341

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：33 / 37

页数：5

共 21 条

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