SYSTEMATICS OF ELECTRONIC-STRUCTURE AND LOCAL BONDING FOR METAL/GAAS(110) INTERFACES

[1] THE FORMATION OF THE AU-GAAS(001) INTERFACE [J]. SURFACE SCIENCE, 1986, 168 (1-3) : 301 - 308

[2] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326

[3] ABRUPTNESS OF SEMICONDUCTOR-METAL INTERFACES [J]. PHYSICAL REVIEW LETTERS, 1981, 46 (13) : 838 - 841

[4] QUANTITATIVE MODEL OF REACTIVE METAL-SEMICONDUCTOR INTERFACE GROWTH USING HIGH-RESOLUTION PHOTOEMISSION RESULTS [J]. PHYSICAL REVIEW B, 1986, 33 (08): : 5435 - 5449

[5] CLUSTER FORMATION AND ATOMIC INTERMIXING AT THE REACTIVE V/GE(111) INTERFACE [J]. PHYSICAL REVIEW B, 1985, 32 (08): : 5149 - 5155

[6] DELGIUDICE M, IN PRESS PHYS REV B

[7] EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656

[8] RARE-EARTH-METAL SEMICONDUCTOR INTERFACIAL REACTIONS - THERMODYNAMIC ASPECTS [J]. PHYSICAL REVIEW B, 1986, 33 (02): : 726 - 735

[9] ADATOM AGGREGATION, REACTION, AND CHEMICAL TRAPPING AT THE SM/GAAS(110) INTERFACE [J]. PHYSICAL REVIEW B, 1985, 32 (02): : 962 - 968

[10] REACTION AT A REFRACTORY-METAL SEMICONDUCTOR INTERFACE - V/GAAS(110) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 918 - 921

[1] THE FORMATION OF THE AU-GAAS(001) INTERFACE [J]. SURFACE SCIENCE, 1986, 168 (1-3) : 301 - 308

[2] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326

[3] ABRUPTNESS OF SEMICONDUCTOR-METAL INTERFACES [J]. PHYSICAL REVIEW LETTERS, 1981, 46 (13) : 838 - 841

[4] QUANTITATIVE MODEL OF REACTIVE METAL-SEMICONDUCTOR INTERFACE GROWTH USING HIGH-RESOLUTION PHOTOEMISSION RESULTS [J]. PHYSICAL REVIEW B, 1986, 33 (08): : 5435 - 5449

[5] CLUSTER FORMATION AND ATOMIC INTERMIXING AT THE REACTIVE V/GE(111) INTERFACE [J]. PHYSICAL REVIEW B, 1985, 32 (08): : 5149 - 5155

[6] DELGIUDICE M, IN PRESS PHYS REV B

[7] EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656

[8] RARE-EARTH-METAL SEMICONDUCTOR INTERFACIAL REACTIONS - THERMODYNAMIC ASPECTS [J]. PHYSICAL REVIEW B, 1986, 33 (02): : 726 - 735

[9] ADATOM AGGREGATION, REACTION, AND CHEMICAL TRAPPING AT THE SM/GAAS(110) INTERFACE [J]. PHYSICAL REVIEW B, 1985, 32 (02): : 962 - 968

[10] REACTION AT A REFRACTORY-METAL SEMICONDUCTOR INTERFACE - V/GAAS(110) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 918 - 921