REACTION AT A REFRACTORY-METAL SEMICONDUCTOR INTERFACE - V/GAAS(110)

被引：16

作者：

GRIONI, M

JOYCE, JJ

WEAVER, JH

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 03期

关键词：

D O I：

10.1116/1.573349

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：918 / 921

页数：4

共 14 条

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[6] X-RAY PHOTOEMISSION SPECTRA OF VALENCE BANDS OF 3D TRANSITION-METALS SC TO FE
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[7] LUDEKE R, 1984, B AM PHYS SOC, V29, P552
[8] VALENCE BAND STUDIES OF CLEAN AND OXYGEN EXPOSED GAAS(110) SURFACES
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[9] THE SI(111)/MO INTERFACE AS STUDIED WITH SYNCHROTRON RADIATION PHOTOEMISSION AND AUGER-ELECTRON SPECTROSCOPIES
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LINDAU, I
SPICER, WE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 617 - 618
[10] CHEMICAL BONDING, ADATOM-ADATOM INTERACTION, AND REPLACEMENT REACTION OF COLUMN-3 METALS ON GAAS(110)
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SU, CY
SPICER, WE
[J]. PHYSICAL REVIEW B, 1983, 28 (12): : 7051 - 7067

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