CLUSTER FORMATION AND ATOMIC INTERMIXING AT THE REACTIVE V/GE(111) INTERFACE

被引：29

作者：

DELGIUDICE, M

JOYCE, JJ

RUCKMAN, MW

WEAVER, JH

机构：

来源：

PHYSICAL REVIEW B | 1985年 / 32卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.32.5149

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5149 / 5155

页数：7

共 28 条

[1] THEORETICAL STUDIES OF THE OPTICAL AND ELECTRONIC PROPERTIES OF V, NB, AND TA
ALWARD, JF
FONG, CY
SRIDHAR, CG
[J]. PHYSICAL REVIEW B, 1978, 18 (10): : 5438 - 5448
[2] EFFECT OF SELF-CONSISTENCY AND EXCHANGE ON ELECTRONIC-STRUCTURE OF TRANSITION-METALS, V, NB, AND TA
BOYER, LL
PAPACONSTANTOPOULOS, DA
KLEIN, BM
[J]. PHYSICAL REVIEW B, 1977, 15 (08) : 3685 - 3693
[3] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES
Brillson, L. J.
[J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326
[4] THE FORMATION OF THE SCHOTTKY-BARRIER AT THE V/SI INTERFACE
CLABES, JG
RUBLOFF, GW
REIHL, B
PURTELL, RJ
HO, PS
ZARTNER, A
HIMPSEL, FJ
EASTMAN, DE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 684 - 687
[5] CHEMICAL-REACTION AND SCHOTTKY-BARRIER FORMATION AT V/SI INTERFACES
CLABES, JG
RUBLOFF, GW
TAN, TY
[J]. PHYSICAL REVIEW B, 1984, 29 (04): : 1540 - 1550
[6] DANIELS RR, 1981, PHYS REV LETT, V47, P875
[7] STRUCTURAL MORPHOLOGY AND ELECTRONIC-PROPERTIES OF THE SI-CR INTERFACE
FRANCIOSI, A
PETERMAN, DJ
WEAVER, JH
MORUZZI, VL
[J]. PHYSICAL REVIEW B, 1982, 25 (08) : 4981 - 4993
[8] FUJIMORI A, UNPUB PHYS REV B
[9] CLUSTER-INDUCED REACTIONS AT A METAL-SEMICONDUCTOR INTERFACE - CE ON SI(111)
GRIONI, M
JOYCE, J
CHAMBERS, SA
ONEILL, DG
DELGIUDICE, M
WEAVER, JH
[J]. PHYSICAL REVIEW LETTERS, 1984, 53 (24) : 2331 - 2334
[10] MODELING A HETEROGENEOUS METAL-SEMICONDUCTOR INTERFACE - CE ON SI(111)
GRIONI, M
JOYCE, J
DELGIUDICE, M
ONEILL, DG
WEAVER, JH
[J]. PHYSICAL REVIEW B, 1984, 30 (12): : 7370 - 7373

← 1 2 3 →