QUANTITATIVE MODEL OF REACTIVE METAL-SEMICONDUCTOR INTERFACE GROWTH USING HIGH-RESOLUTION PHOTOEMISSION RESULTS

被引：41

作者：

BUTERA, RA ^{[1
]}

DELGIUDICE, M ^{[1
]}

WEAVER, JH ^{[1
]}

机构：

[1] UNIV MINNESOTA,DEPT CHEM ENGN & MAT SCI,MINNEAPOLIS,MN 55455

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.33.5435

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5435 / 5449

页数：15

共 34 条

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