INITIAL ADSORPTION STATE FOR AL ON GAAS(110) AND ITS ROLE IN THE SCHOTTKY-BARRIER FORMATION

被引：72

作者：

DANIELS, RR

KATNANI, AD

ZHAO, TX

MARGARITONDO, G

ZUNGER, A

机构：

[1] SOLAR ENERGY RES INST, GOLDEN, CO 80401 USA

[2] UNIV COLORADO, DEPT PHYS, BOULDER, CO 80309 USA

来源：

PHYSICAL REVIEW LETTERS | 1982年 / 49卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.49.895

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：895 / 898

页数：4

共 24 条

[1] METAL-SEMICONDUCTOR SURFACE AND INTERFACE STATES ON (110) GAAS
BACHRACH, RZ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1340 - 1343
[2] RECONSTRUCTIONS OF GAAS AND AIAS SURFACES AS A FUNCTION OF METAL TO AS RATIO
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HANSSON, GV
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 335 - 343
[3] SURFACE-REACTIONS AND INTERDIFFUSION
BACHRACH, RZ
BAUER, RS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1149 - 1153
[4] ATOMIC MODULATION OF INTER-DIFFUSION AT AU-GAAS INTERFACES
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MARGARITONDO, G
STOFFEL, NG
[J]. PHYSICAL REVIEW LETTERS, 1980, 44 (10) : 667 - 670
[5] ABRUPTNESS OF SEMICONDUCTOR-METAL INTERFACES
BRILLSON, LJ
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STOFFEL, NG
KATNANI, AD
MARGARITONDO, G
[J]. PHYSICAL REVIEW LETTERS, 1981, 46 (13) : 838 - 841
[6] TRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITY
BRILLSON, LJ
[J]. PHYSICAL REVIEW LETTERS, 1978, 40 (04) : 260 - 263
[7] CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES
BRILLSON, LJ
BACHRACH, RZ
BAUER, RS
MCMENAMIN, J
[J]. PHYSICAL REVIEW LETTERS, 1979, 42 (06) : 397 - 401
[8] CHEMISORPTION SITE GEOMETRY AND INTERFACE ELECTRONIC-STRUCTURE OF GA AND AL ON GAAS(110)
CHADI, DJ
BACHRACH, RZ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1159 - 1163
[9] SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATION FOR THE RELAXED (110) SURFACE OF GAAS
CHELIKOWSKY, JR
COHEN, ML
[J]. PHYSICAL REVIEW B, 1979, 20 (10) : 4150 - 4159
[10] SURFACE-STATES AND METAL OVERLAYERS ON (110) SURFACE OF GAAS
CHELIKOWSKY, JR
LOUIE, SG
COHEN, ML
[J]. SOLID STATE COMMUNICATIONS, 1976, 20 (07) : 641 - 644

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