ROLE OF VIRTUAL GAP STATES AND DEFECTS IN METAL-SEMICONDUCTOR CONTACTS

被引：298

作者：

MONCH, W

机构：

来源：

PHYSICAL REVIEW LETTERS | 1987年 / 58卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.58.1260

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：1260 / 1263

页数：4

相关论文

共 33 条

[1] UNIFIED THEORY OF POINT-DEFECT ELECTRONIC STATES, CORE EXCITONS, AND INTRINSIC ELECTRONIC STATES AT SEMICONDUCTOR SURFACES
ALLEN, RE
DOW, JD
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 383 - 387
[2] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT
BARDEEN, J
[J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727
[3] BRAUN F, 1874, POGG ANN, V153, P556
[4] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES
Brillson, L. J.
[J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326
[5] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS
COWLEY, AM
SZE, SM
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) : 3212 - &
[6] VACANCIES NEAR SEMICONDUCTOR SURFACES
DAW, MS
SMITH, DL
[J]. PHYSICAL REVIEW B, 1979, 20 (12): : 5150 - 5156
[7] A MICROSCOPIC MODEL OF METAL-SEMICONDUCTOR CONTACTS
DUKE, CB
MAILHIOT, C
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1170 - 1177
[8] SILICIDE SCHOTTKY BARRIERS - ELEMENTAL DESCRIPTION
FREEOUF, JL
[J]. SOLID STATE COMMUNICATIONS, 1980, 33 (10) : 1059 - 1061
[9] THEORY OF SURFACE STATES
HEINE, V
[J]. PHYSICAL REVIEW, 1965, 138 (6A): : 1689 - &
[10] CHEMICAL BONDING AND SCHOTTKY-BARRIER FORMATION AT TRANSITION-METAL SILICON INTERFACES
HO, PS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1983, 1 (02): : 745 - 756

← 1 2 3 4 →