CHEMICAL BONDING AND SCHOTTKY-BARRIER FORMATION AT TRANSITION-METAL SILICON INTERFACES

被引：57

作者：

HO, PS

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1983年 / 1卷 / 02期

关键词：

D O I：

10.1116/1.571993

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：745 / 756

页数：12

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