ELECTRONIC-STRUCTURE OF VANADIUM SILICIDES

被引：55

作者：

BISI, O ^{[1
]}

CHIAO, LW ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW B | 1982年 / 25卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.25.4943

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4943 / 4948

页数：6

共 45 条

[1] ELECTRONIC-STRUCTURE OF COMPOUNDS AT PLATINUM - SILICON (III) INTERFACE
ABBATI, I
BRAICOVICH, L
DEMICHELIS, B
BISI, O
ROVETTA, R
[J]. SOLID STATE COMMUNICATIONS, 1981, 37 (02) : 119 - 122
[2] ULTRAVIOLET PHOTOELECTRON INVESTIGATION OF SI(111)-AU INTERFACE AT HIGH-TEMPERATURES
ABBATI, I
BRAICOVICH, L
FRANCIOSI, A
[J]. SOLID STATE COMMUNICATIONS, 1980, 33 (08) : 881 - 884
[3] SPECTROSCOPIC EVIDENCE OF CHEMICAL INTERACTION IN SI-PT INTERFACES AT LIQUID-NITROGEN TEMPERATURE
ABBATI, I
BRAICOVICH, L
DEMICHELIS, B
[J]. SOLID STATE COMMUNICATIONS, 1980, 36 (02) : 145 - 147
[4] [Anonymous], PHYSICAL ACOUSTICS P
[5] EXPERIMENTAL BAND-STRUCTURE (ERK) OF V3SI BY ANGLE-RESOLVED PHOTOEMISSION
AONO, M
HIMPSEL, FJ
EASTMAN, DE
[J]. SOLID STATE COMMUNICATIONS, 1981, 39 (02) : 225 - 228
[6] TREND STUDIES OF A15 COMPOUNDS BY SELF-CONSISTENT BAND CALCULATIONS
ARBMAN, G
JARLBORG, T
[J]. SOLID STATE COMMUNICATIONS, 1978, 26 (11) : 857 - 861
[7] MOLECULAR ORBITAL THEORY FOR OCTAHEDRAL AND TETRAHEDRAL METAL COMPLEXES
BASCH, H
VISTE, A
GRAY, HB
[J]. JOURNAL OF CHEMICAL PHYSICS, 1966, 44 (01) : 10 - +
[8] TRANSITION-METAL SILICIDES - ASPECTS OF THE CHEMICAL-BOND AND TRENDS IN THE ELECTRONIC-STRUCTURE
BISI, O
CALANDRA, C
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (35): : 5479 - 5494
[9] PHOTOEMISSION-STUDIES OF THE SILICON GOLD INTERFACE
BRAICOVICH, L
GARNER, CM
SKEATH, PR
SU, CY
CHYE, PW
LINDAU, I
SPICER, WE
[J]. PHYSICAL REVIEW B, 1979, 20 (12): : 5131 - 5141
[10] ELECTRONIC-STRUCTURE AND FERMI-SURFACE OF YZN ALLOY
BREEZE, A
PERKINS, PG
[J]. JOURNAL OF PHYSICS F-METAL PHYSICS, 1975, 5 (02): : 255 - 260

← 1 2 3 4 5 →