ELECTRONIC-STRUCTURE OF VANADIUM SILICIDES

被引：55

作者：

BISI, O ^{[1
]}

CHIAO, LW ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW B | 1982年 / 25卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.25.4943

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4943 / 4948

页数：6

共 45 条

[31] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS
MURARKA, SP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04): : 775 - 792
[32] XPS AND APS STUDIES OF V3SI
NILSSON, PO
CURELARU, I
JARLBORG, T
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1977, 79 (01): : 277 - 281
[33] REVIEW OF BINARY ALLOY FORMATION BY THIN-FILM INTERACTIONS
OTTAVIANI, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1112 - 1119
[34] ANALYSIS OF THIN-FILMS AND INTERFACES
POATE, JM
TU, KN
[J]. PHYSICS TODAY, 1980, 33 (05) : 34 - 38
[35] PHOTOELECTRON-SPECTRA OF V3SI, A HIGH TC SUPERCONDUCTOR WITH A15 STRUCTURE
RILEY, J
AZOULAY, J
LEY, L
[J]. SOLID STATE COMMUNICATIONS, 1976, 19 (10) : 993 - 995
[36] NATURE OF THE VALENCE STATES IN SILICON TRANSITION-METAL INTERFACES
ROSSI, G
ABBATI, I
BRAICOVICH, L
LINDAU, I
SPICER, WE
[J]. SOLID STATE COMMUNICATIONS, 1981, 39 (02) : 195 - 198
[37] APPLICATION OF AUGER-ELECTRON SPECTROSCOPY TO STUDIES OF SILICON-SILICIDE INTERFACE
ROTH, JA
CROWELL, CR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1317 - 1324
[38] CHEMICAL BONDING AND REACTIONS AT THE PD-SI INTERFACE
RUBLOFF, GW
HO, PS
FREEOUF, JF
LEWIS, JE
[J]. PHYSICAL REVIEW B, 1981, 23 (08) : 4183 - 4196
[39] POSITRON-ANNIHILATION EXPERIMENT AND BANDSTRUCTURE OF V3SI
SAMOILOV, S
WEGER, M
NOWIK, I
GOLDBERG, IB
ASHKENAZI, J
[J]. JOURNAL OF PHYSICS F-METAL PHYSICS, 1981, 11 (06): : 1281 - 1301
[40] SCHMID PE, 1981, J VAC SCI TECHNOL, V18, P4183