CHEMICAL BONDING AND REACTIONS AT THE PD-SI INTERFACE

[1] COMPARISON OF PHOTOELECTRIC PROPERTIES OF CLEAVED HEATED + SPUTTERED SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) : 597 - &

[2] CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (01) : 56 - 59

[3] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727

[4] BRAICOVICH L, 1980, J VAC SCI TECHNOL, V17, P1005, DOI 10.1116/1.570581

[5] BRILLSON LJ, 1978, J VAC SCI TECHNOL, V15, P1378, DOI 10.1116/1.569792

[6] CHEMICAL-REACTIONS AND LOCAL CHARGE REDISTRIBUTION AT METAL-CDS AND CDSE INTERFACES [J]. PHYSICAL REVIEW B, 1978, 18 (06): : 2431 - 2446

[7] TRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITY [J]. PHYSICAL REVIEW LETTERS, 1978, 40 (04) : 260 - 263

[8] CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES [J]. PHYSICAL REVIEW LETTERS, 1979, 42 (06) : 397 - 401

[9] STRUCTURE AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL PALLADIUM SILICIDE CONTACTS ON SINGLE-CRYSTAL SILICON AND DIFFUSED P-N DIODES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1331 - &

[10] Cardona M., 1969, MODULATION SPECTROSC

[1] COMPARISON OF PHOTOELECTRIC PROPERTIES OF CLEAVED HEATED + SPUTTERED SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) : 597 - &

[2] CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (01) : 56 - 59

[3] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727

[4] BRAICOVICH L, 1980, J VAC SCI TECHNOL, V17, P1005, DOI 10.1116/1.570581

[5] BRILLSON LJ, 1978, J VAC SCI TECHNOL, V15, P1378, DOI 10.1116/1.569792

[6] CHEMICAL-REACTIONS AND LOCAL CHARGE REDISTRIBUTION AT METAL-CDS AND CDSE INTERFACES [J]. PHYSICAL REVIEW B, 1978, 18 (06): : 2431 - 2446

[7] TRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITY [J]. PHYSICAL REVIEW LETTERS, 1978, 40 (04) : 260 - 263

[8] CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES [J]. PHYSICAL REVIEW LETTERS, 1979, 42 (06) : 397 - 401

[9] STRUCTURE AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL PALLADIUM SILICIDE CONTACTS ON SINGLE-CRYSTAL SILICON AND DIFFUSED P-N DIODES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1331 - &

[10] Cardona M., 1969, MODULATION SPECTROSC