INFLUENCE OF THE OXIDATION PROCESS ON THE LUMINESCENCE OF HF-TREATED POROUS SILICON

被引：19

作者：

DITTRICH, T ^{[1
]}

FLIETNER, H ^{[1
]}

TIMOSHENKO, VY ^{[1
]}

KASHKAROV, PK ^{[1
]}

机构：

[1] MOSCOW MV LOMONOSOV STATE UNIV,DEPT PHYS,MOSCOW 119899,RUSSIA

来源：

THIN SOLID FILMS | 1995年 / 255卷 / 1-2期

关键词：

LUMINESCENCE; NANOSTRUCTURES; OXIDATION; SILICON;

D O I：

10.1016/0040-6090(94)05642-Q

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

HF-treated porous silicon (PS) was investigated in situ by photoluminescence (PL) in the red-orange region after treatments in various oxidizing atmospheres. Oxidation in moist air induces a blue shift of the PL spectra with increasing oxidation time. The PL intensity of HF-treated PS decreases after treatment in dry oxygen. The PL intensity of HF-treated PS increases strongly after treatment in water atmosphere for treatment times up to 2 days and decreases for longer times, while the increase is enhanced in the red-orange region of the PL spectra. We found that the PL in the red-orange region of PS is correlated with the initial oxidation process of PS.

引用

页码：149 / 151

页数：3

共 11 条

[1] INVESTIGATION OF NATIVE-OXIDE GROWTH ON HF-TREATED SI(111) SURFACES BY MEASURING THE SURFACE-STATE DISTRIBUTION
ANGERMANN, H
DITTRICH, T
FLIETNER, H
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1994, 59 (02): : 193 - 197
[2] IN-SITU MEASUREMENTS OF WATER IMMERSION AND UV IRRADIATION EFFECTS ON INTENSITY AND BLUE-SHIFT OF VISIBLE PHOTOLUMINESCENCE IN POROUS SI
BABA, M
KUWANO, G
MIWA, T
TANIGUCHI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (4A): : L483 - L486
[3] THE ORIGIN OF VISIBLE LUMINESCENCE FROM POROUS SILICON - A NEW INTERPRETATION
BRANDT, MS
FUCHS, HD
STUTZMANN, M
WEBER, J
CARDONA, M
[J]. SOLID STATE COMMUNICATIONS, 1992, 81 (04) : 307 - 312
[4] BSIESY A, 1995, THIN SOLID FILMS, V255, P30
[5] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS
CANHAM, LT
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (10) : 1046 - 1048
[6] ELECTRONIC-PROPERTIES OF THE HF-PASSIVATED SI(111) SURFACE DURING THE INITIAL OXIDATION IN AIR
DITTRICH, T
ANGERMANN, H
FUSSEL, W
FLIETNER, H
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1993, 140 (02): : 463 - 470
[7] FLIETNER H, 1991, 7TH P C INS FILMS SE, P151
[8] GRAF D, 1989, J VAC SCI TECHNOL A, V7, P808, DOI 10.1116/1.575845
[9] KOCH F, 1993, MATER RES SOC SYMP P, V298, P319, DOI 10.1557/PROC-298-319
[10] SILICON CLUSTER TERMINATED BY HYDROGEN, FLUORINE AND OXYGEN-ATOMS - A CORRELATION WITH VISIBLE LUMINESCENCE OF POROUS SILICON
KUMAR, R
KITOH, Y
SHIGEMATSU, K
HARA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B): : 909 - 913

← 1 2 →