Low resistivity cubic phase CdS films by chemical bath deposition technique

被引：81

作者：

DEMELO, O ^{[1
]}

HERNANDEZ, L ^{[1
]}

ZELAYAANGEL, O ^{[1
]}

LOZADAMORALES, R ^{[1
]}

BECERRIL, M ^{[1
]}

VASCO, E ^{[1
]}

机构：

[1] UNIV HAVANA, FAC PHYS, HAVANA 10400, CUBA

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 10期

关键词：

D O I：

10.1063/1.112094

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter we report on cubic CdS thin films with low resistivity by chemical bath deposition (CBD) technique and subsequent annealings in S2 and H-2 + In. Low temperature photoluminescence, x rays, and transmission spectra support the assumption that S2 annealings contribute to fill the vacancies in the as-deposited films leading to an enlargement of the CdS cubic cell. This fact is revealed by an increase in interplanar distances, evanescence of the PL red broad band, and decrease in band-gap energies. Cubic phase remains after H-2 + In annealing at higher temperatures. A resistivity as low as 11 OMEGA cm was obtained at an optimum annealing temperature of 350-degrees-C.

引用

页码：1278 / 1280

页数：3

共 9 条

[1] EFFECT OF THERMAL ANNEALING ON THE CATHODOLUMINESCENCE OF EVAPORATED CDS FILMS [J].