BAND-GAP SHIFT IN CDS SEMICONDUCTOR BY PHOTOACOUSTIC-SPECTROSCOPY - EVIDENCE OF A CUBIC TO HEXAGONAL LATTICE TRANSITION

被引：203

作者：

ZELAYAANGEL, O

ALVARADOGIL, JJ

LOZADAMORALES, R

VARGAS, H

DASILVA, AF

机构：

[1] UNIV ESTADUAL CAMPINAS,INST FIS,BR-13081970 CAMPINAS,SP,BRAZIL

[2] INPE,ASSOCIADO SENSORES E MAT LAB,LAS,BR-12225 S JOSE CAMPOS,BRAZIL

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 03期

关键词：

D O I：

10.1063/1.111184

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The band-gap energies of the CdS semiconductor are obtained by a photoacoustic spectroscopy (PAS) technique over a range of temperature of thermal annealing (TTA), in which the evolution of the sample structure is characterized by x-ray diffraction patterns. The PAS experiment gives a set of data for the band-gap shift in the region of the fundamental absorption edge. With increasing TTA the band-gap shift increases up to a critical TTA when its slope decreases in a roughly symmetrical way. It is suggested that at this temperature a cubic to hexagonal-lattice transition occurs.

引用

页码：291 / 293

页数：3

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