IMPURITY CONDUCTIVITIES IN COMPENSATED SEMICONDUCTOR SYSTEMS

被引：7

作者：

DASILVA, AF ^{[1
]}

机构：

[1] INST NACL PESQUISAS ESPACIAIS,ASS SENSORES & MAT LAB,BR-12225 S JOSE CAMPO,SP,BRAZIL

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.48.1921

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In light of recent measurements of the transport properties in compensated semiconductor systems, we report a calculation for the low-temperature dc electrical conductivity of the systems Si:P and Ge:Sb as a function of concentration and compensation. The effects of disorder are taken into account in the calculation. With increasing compensation the conductivity follows the trend of the experimental results. For uncompensated systems the results agree fairly well with experiments.

引用

页码：1921 / 1923

页数：3

共 37 条

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