INTERVALLEY MIXING VERSUS DISORDER IN HEAVILY DOPED N-TYPE SILICON

被引：24

作者：

BERGGREN, KF

SERNELIUS, B

机构：

来源：

PHYSICAL REVIEW B | 1984年 / 29卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.29.5575

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5575 / 5580

页数：6

共 29 条

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