DOPED SEMICONDUCTOR AS AN AMORPHOUS ANTIFERROMAGNET

被引：19

作者：

FRANZEN, NI

BERGGREN, KF

机构：

来源：

PHYSICAL REVIEW B | 1982年 / 25卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.25.1993

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1993 / 1996

页数：4

共 15 条

[1]

ANDRES K, COMMUNICATION

[2]

ANDRES K, 1979, B AM PHYSICAL SOC, V24, P262

[3] A CLUSTER MODEL FOR AMORPHOUS ANTIFERROMAGNETISM [J].

FRANZEN, NI ;

BERGGREN, KF .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 43 (01) :29-49

[4]

FRANZEN NI, 1981, 1980 P ANN C COND MA, V4

[5]

FRIEDMAN LR, 1978, METAL INSULATOR TRAN

[6]

Geschwind S., 1980, Journal de Physique Colloque, V41, pC5/105, DOI 10.1051/jphyscol:1980520

[7] MAGNETIC-FIELD DEPENDENCE OF THE SPECIFIC-HEAT OF HEAVILY PHOSPHORUS DOPED SILICON [J].

KOBAYASHI, N ;

IKEHATA, S ;

KOBAYASHI, S ;

SASAKI, W .

SOLID STATE COMMUNICATIONS, 1979, 32 (11) :1147-1150

[8]

KOBAYASHI N, COMMUNICATION

[9] NUCLEAR MAGNETIC-ORDERING IN PRNI5 AT 0.4 MK [J].

KUBOTA, M ;

FOLLE, HR ;

BUCHAL, C ;

MUELLER, RM ;

POBELL, F .

PHYSICAL REVIEW LETTERS, 1980, 45 (22) :1812-1815

[10] MAGNETIC-BEHAVIOR OF AN S=1/2 AMORPHOUS ANTI-FERROMAGNET [J].

KUMMER, RB ;

WALSTEDT, RE ;

GESCHWIND, S ;

NARAYANAMURTI, V ;

DEVLIN, GE .

PHYSICAL REVIEW LETTERS, 1978, 40 (16) :1098-1101

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