MAGNETIC-FIELD DEPENDENCE OF THE SPECIFIC-HEAT OF HEAVILY PHOSPHORUS DOPED SILICON

被引：64

作者：

KOBAYASHI, N

IKEHATA, S

KOBAYASHI, S

SASAKI, W

机构：

[1] Department of Physics, Faculty of Science, University of Tokyo, Tokyo, 113

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 32卷 / 11期

关键词：

D O I：

10.1016/0038-1098(79)90850-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The specific heat of phosphorus doped silicon was measured at temperatures 0.1 < T < 4.2 K in external magnetic fields 0 ≦ Hext ≦ 38 kOe. The phosphorus concentration of the samples ranges from 5.3 × 1017 to 8.9 × 1018 cm-3. The magnetic field dependence of the specific heat was observed in the just metallic samples as well as the non-metallic ones. The metal-non-metal transition is discussed on the basis of the Anderson localized states with correlations. © 1979.

引用

页码：1147 / 1150

页数：4

共 14 条

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