SPACE-CHARGE DEPLETION STUDIES OF DEEP STATES IN GLASSY SEMICONDUCTORS

被引：28

作者：

ABKOWITZ, M

MAITRA, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 03期

关键词：

D O I：

10.1063/1.338195

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1038 / 1046

页数：9

共 10 条

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[3] ELECTRICAL BEHAVIOR OF CHEMICALLY MODIFIED AMORPHOUS SE STUDIED BY XEROGRAPHIC DEPLETION DISCHARGE
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[4] EVIDENCE OF EQUILIBRIUM NATIVE DEFECT POPULATIONS IN AMORPHOUS CHALCOGENIDES FROM ANALYSES OF XEROGRAPHIC SPECTRA
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[6] CHEUNG L, 1982, PHOTOGR SCI ENG, V26, P245
[7] DARK DISCHARGE IN AMORPHOUS AS2SE3 FILMS
ING, SW
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[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) : 2670 - &
[8] FREQUENCY-DEPENDENCE OF CONDUCTIVITY OF BULK AMORPHOUS SELENIUM AND TELLURIUM-DOPED SELENIUM
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[9] CHARGE GENERATION FROM BAND-GAP STATES IN AMORPHOUS SELENIUM FILMS
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[10] ANOMALOUS TRANSIT-TIME DISPERSION IN AMORPHOUS SOLIDS
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