RECOMBINATION OF IMPACT IONIZED EXCESS CARRIERS IN N-TYPE AND P-TYPE INDIUMANTIMONIDE

被引：7

作者：

BAUMGART, HD

NIMTZ, G

KOKOSCHINEGG, P

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1972年 / 12卷 / 02期

关键词：

D O I：

10.1002/pssa.2210120215

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：477 / +

页数：1

共 6 条

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BRINGER, A ;

NIMTZ, G .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1971, 46 (01) :235-+

[2] INSB CARRIER LIFETIME IN HIGH ELECTRIC FIELD [J].

HONGO, S ;

PANYAKEOW, S ;

SHIRAFUJI, J ;

INUISHI, Y .

[3] CARRIER LIFETIME IN INDIUM ANTIMONIDE [J].

LAFF, RA ;

FAN, HY .

PHYSICAL REVIEW, 1961, 121 (01) :53-&

[4]

NIMTZ G, 1972, VERH DPG, V7, P589

PRATT, RG ;

RIDLEY, BK .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 85 (544P) :293-&

[6]

ROSENTHAL W, 1972, VERH DPG, V7, P588