DEEP CENTERS FOR OPTICAL-PROCESSING IN CDTE

被引：49

作者：

RZEPKA, E

MARFAING, Y

CUNIOT, M

TRIBOULET, R

机构：

[1] Laboratoire de Physique des Solides de Bellevue, F92195 Meudon Cedex

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 16卷 / 1-3期

关键词：

D O I：

10.1016/0921-5107(93)90057-T

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The characteristics of defect and impurity centres which introduce near-mid-gap localized levels in CdTe are reviewed. Attention is focused on the 0.8-0.9 eV energy depth range corresponding to the wavelength range of optical telecommunications. The most appropriate centres are deep donors of group IV (tin, germanium) and transition metals (either deep donors (titanium, vanadium) or a deep acceptor (nickel)).

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页码：262 / 267

页数：6

相关论文

共 36 条

[1] INTERACTION OF DEFECTS IN CDTE-CRYSTALS HEAVILY DOPED WITH CHLORINE [J].

AGRINSKAYA, NV ;

MATVEEV, OA .

REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (02) :235-237

[2]

BALNI PI, 1990, SOV PHYS SEMICOND, V24, P904

[3]

BALNI PI, 1989, SOV PHYS SEMICOND, V23, P485

[4] CRYSTAL-FIELD SPECTRA OF 3DN IMPURITIES IN2-6 AND 3-5 COMPOUND SEMICONDUCTORS [J].

BARANOWSKI, JM ;

ALLEN, JW ;

PEARSON, GL .

PHYSICAL REVIEW, 1967, 160 (03) :627-+

[5]

BARANOWSKI JM, 1972, P C PHYSICS SEMICOND, P1001

[6] EVOLUTION OF RESISTIVITY ALONG CL-COMPENSATED THM GROWN CADMIUM TELLURIDE CRYSTALS [J].

BIGLARI, B ;

SAMIMI, M ;

KOEBEL, JM ;

HAGEALI, M ;

SIFFERT, P .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 100 (02) :589-596

[7] ELECTRON-SPIN RESONANCE IDENTIFICATION OF ISOLATED FE3+ IN CDTE [J].

BRUNTHALER, G ;

KAUFMANN, U ;

SCHNEIDER, J .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) :2974-2976

[8]

BRUNTHALER G, 13TH P INT C DEF SEM, P1199

[9] PHOTOREFRACTIVE PROPERTIES OF DOPED CADMIUM TELLURIDE [J].

BYLSMA, RB ;

BRIDENBAUGH, PM ;

OLSON, DH ;

GLASS, AM .

APPLIED PHYSICS LETTERS, 1987, 51 (12) :889-891

[10] A UNIVERSAL TREND IN THE BINDING-ENERGIES OF DEEP IMPURITIES IN SEMICONDUCTORS [J].

CALDAS, MJ ;

FAZZIO, A ;

ZUNGER, A .

APPLIED PHYSICS LETTERS, 1984, 45 (06) :671-673

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