PERFORMANCE OF X-BAND GUNN OSCILLATORS OVER TEMPERATURE RANGE 30 DEGREES C TO 120 DEGREES C

被引：12

作者：

BOTT, IB

HOLLIDAY, HR

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1967.15998

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：522 / +

页数：1

共 8 条

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[2] BOTT IB, 1966, P INT S GAAS
[3] RECENT RESULTS WITH EPITAXIAL GAAS GUNN EFFECT OSCILLATORS
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KNIGHT, S
LAWLEY, KL
UENOHARA, M
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[4] CALCULATION OF VELOCITY-FIELD CHARACTERISTIC FOR GALLIUM ARSENIDE
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FAWCETT, W
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[5] HILSUM C, PRIVATE COMMUNICATIO
[6] HEAT FLOW IN N++-N-N+ EPITAXIAL GAAS BULK EFFECT DEVICES
KNIGHT, S
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (01): : 112 - &
[7] CURRENT RUNAWAY IN N-GAAS BULK EFFECT DEVICES
KNIGHT, S
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (07): : 1004 - &
[8] WARNER FL, 1966, ELECTRONIC LETT, V2