HOT-ELECTRON DESIGN CONSIDERATIONS FOR HIGH-DENSITY RAM CHIPS

被引：10

作者：

TROUTMAN, RR ^{[1
]}

HARROUN, TV ^{[1
]}

COTTRELL, PE ^{[1
]}

CHAKRAVARTI, SN ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,TROY,NY 12181

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 08期

关键词：

D O I：

10.1109/T-ED.1980.20081

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1629 / 1639

页数：11

共 15 条

[1]

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[2] HOT-CARRIER INSTABILITY IN IGFETS [J].

ABBAS, SA ;

DOCKERTY, RC .

APPLIED PHYSICS LETTERS, 1975, 27 (03) :147-148

[3]

ABBAS SA, 1974, IEDM TECH DIG, P404

[4]

ABBAS SA, 1975, IEDM TECH DIG, P35

[5] HOT-ELECTRON EMISSION IN N-CHANNEL IGFETS [J].

COTTRELL, PE ;

TROUTMAN, RR ;

NING, TH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :520-533

[6] CHARACTERIZATION OF ELECTRONIC GATE CURRENT IN IGFETS OPERATING IN LINEAR AND SATURATION REGIONS [J].

COTTRELL, PE ;

TROUTMAN, RR ;

NING, TH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (09) :1200-1200

[7]

COTTRELL PE, 1975, IEDM TECH DIG, P51

[8] A NEW INSTABILITY IN MOS TRANSISTOR CAUSED BY HOT ELECTRON AND HOLE INJECTION FROM DRAIN AVALANCHE PLASMA INTO GATE OXIDE [J].

HARA, H ;

OKAMOTO, Y ;

OHNUMA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (09) :1103-+

[9]

HELLER LG, 1979, ISSCC DIG TECH PAPER, P20

[10]

KENNEDY DP, 1973, IEDM, P160

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