FAR-INFRARED ANALYSIS OF IN1-X GAXSB FILMS GROWN ON GAAS BY METAL-ORGANIC MAGNETRON SPUTTERING

被引：11

作者：

MACLER, M ^{[1
]}

FENG, ZC ^{[1
]}

PERKOWITZ, S ^{[1
]}

ROUSINA, R ^{[1
]}

WEBB, J ^{[1
]}

机构：

[1] NATL RES COUNCIL CANADA,INST MICROSTRUCT SCI,OTTAWA K1A 0R6,ONTARIO,CANADA

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.46.6902

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Infrared reflectivity spectra over 50-450 cm-1 yield phonon, band, and transport information for In1-xGaxSb films grown on GaAs by metal-organic magnetron sputtering. The infrared effective masses for n-type samples with x =0 and 0.01 agree with theory and with other measurements. The infrared masses for p-type material agree with theory at lower carrier densities, and increase with carrier concentration. The dependence of the longitudinal- and transverse-optical (TO) phonon mode frequencies on the alloy parameter x is given. The TO frequencies are higher than in bulk In1-xGaxSb for the InSb-like modes, possibly due to strain arising from the lattice mismatch between the film and the substrate. For most of the films, the thickness and resistivity derived from the infrared data agree well with values from scanning electron microscopy and van der Pauw resistivity measurements, respectively.

引用

页码：6902 / 6906

页数：5

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