DARK CURRENT-INDUCED IN LARGE CCD ARRAYS BY PROTON-INDUCED ELASTIC REACTIONS AND SINGLE TO MULTIPLE-EVENT SPALLATION REACTIONS

被引：2

作者：

CHEN, L ^{[1
]}

MCNULTY, PJ ^{[1
]}

LARSON, S ^{[1
]}

THOMPSON, DA ^{[1
]}

MILLER, TL ^{[1
]}

LEE, T ^{[1
]}

机构：

[1] EASTMAN KODAK CO,ROCHESTER,NY 14650

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1994年 / 41卷 / 06期

关键词：

D O I：

10.1109/23.340534

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Computer simulations of the non-ionizing energy loss deposited in sensitive volumes as a result of proton-induced spallation reactions agree with analytic models for large sensitive volumes exposed to high fluence. They predict unique features for small volumes and low-fluence exposures which are observed in exposures of large arrays of CCD pixels. Calculations of the number of spallation reactions per pixel correlate with the recently reported relative frequency of switching dark-current states.

引用

页码：1992 / 1998

页数：7

共 10 条

[1] ENERGY-DEPENDENCE OF PROTON-INDUCED DISPLACEMENT DAMAGE IN SILICON
BURKE, EA
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) : 1276 - 1281
[2] CHEN L, 1993, IN PRESS 2ND P EUR C, P526
[3] A COMPARISON OF MONTE-CARLO AND ANALYTIC TREATMENTS OF DISPLACEMENT DAMAGE IN SI MICROVOLUMES
DALE, CJ
CHEN, L
MCNULTY, PJ
MARSHALL, PW
BURKE, EA
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1994, 41 (06) : 1974 - 1983
[4] PULSE HEIGHT DEFECT AND ENERGY DISPERSION IN SEMICONDUCTOR DETECTORS
HAINES, EL
WHITEHEAD, AB
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1966, 37 (02) : 190 - +
[5] RANDOM TELEGRAPH SIGNALS FROM PROTON-IRRADIATED CCDS
HOPKINS, IH
HOPKINSON, GR
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1993, 40 (06) : 1567 - 1574
[6] Littmark U., 1980, HDB RANGE DISTRIBUTI
[7] PROTON-INDUCED DISPLACEMENT DAMAGE DISTRIBUTIONS AND EXTREMES IN SILICON MICROVOLUMES
MARSHALL, PW
DALE, CJ
BURKE, EA
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1990, 37 (06) : 1776 - 1783
[8] PROTON-INDUCED SPALLATION REACTIONS
MCNULTY, PJ
ABDELKADER, WG
FARRELL, GE
[J]. RADIATION PHYSICS AND CHEMISTRY, 1994, 43 (1-2): : 139 - 149
[9] PROTON-INDUCED NUCLEAR-REACTIONS IN SILICON
MCNULTY, PJ
FARRELL, GE
TUCKER, WP
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) : 4007 - 4012
[10] MCNULTY PJ, 1991, NUCL TRACKS RAD MEAS, V19, P929

← 1 →