INFRARED STUDIES OF THE DYNAMICS OF TRANSFORMATIONS BETWEEN NORMAL AND METASTABLE STATE OF THE EL2 CENTER IN GAAS

被引：19

作者：

FUCHS, F

DISCHLER, B

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 09期

关键词：

D O I：

10.1063/1.98332

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：679 / 681

页数：3

共 13 条

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[4] PHOTORESPONSE OF THE EL2 ABSORPTION IN UNDOPED SEMIINSULATING GAAS [J].

DISCHLER, B ;

FUCHS, F ;

KAUFMANN, U .

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[5]

DISCHLER B, 1986, 14TH P C DEF SEM, P359

[6]

FUCHS F, 1986, 4TH P C SEM 3 5 MAT, P329

[7]

MARTIN GM, 1986, DEEP CTR SEMICONDUCT, P399

[8] AUGER DEEXCITATION OF A METASTABLE STATE IN GAAS [J].

MITONNEAU, A ;

MIRCEA, A .

SOLID STATE COMMUNICATIONS, 1979, 30 (03) :157-162

[9] METASTABLE STATE OF EL2 IN THE GAAS1-XPX ALLOY SYSTEM [J].

OMLING, P ;

SAMUELSON, L ;

GRIMMEISS, HG .

PHYSICAL REVIEW B, 1984, 29 (08) :4534-4539

[10]

PARKER JC, 1986, 14TH P INT C DEF SEM, P347

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