CONDUCTION BANDS IN INL-XALXP

[1] BLUM SE, 1969, J ELECTROCHEM SOC, V115, P324

[2] COMPOSITION DEPENDENCE OF GA1-XALXAS DIRECT AND INDIRECT ENERGY GAPS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) : 4910 - &

[3] RADIATIVE RECOMBINATION FROM GAAS DIRECTLY EXCITED BY ELECTRON BEAMS [J]. SOLID STATE COMMUNICATIONS, 1964, 2 (11) : 353 - 358

[4] INTRABAND AND INTERBAND FREE-CARRIER ABSORPTION AND FUNDAMENTAL ABSORPTION EDGE IN N-TYPE INP [J]. PHYSICAL REVIEW B, 1970, 1 (12): : 4668 - &

[5] UBER DAS AIP - DARSTELLUNG, ELEKTRISCHE UND OPTISCHE EIGENSCHAFTEN [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (3-4) : 302 - 309

[6] ELECTROLUMINESCENCE OF DIFFUSED GAAS1-XPX DIODES WITH LOW DONOR CONCENTRATIONS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (04) : 1830 - &

[7] BAND STRUCTURE AND DIRECT TRANSITION ELECTROLUMINESCENCE IN IN1-XGAXP ALLOYS [J]. APPLIED PHYSICS LETTERS, 1968, 13 (12) : 421 - &

[8] FUNDAMENTAL ABSORPTION EDGE OF AIAS AND AIP [J]. SOLID STATE COMMUNICATIONS, 1970, 8 (09) : 693 - &

[9] REUTER W, PRIVATE COMMUNICATIO

[10] GAP RED ELECTROLUMINESCENT DIODES WITH AN EXTERNAL QUANTUM EFFICIENCY OF 7 PERCENT [J]. APPLIED PHYSICS LETTERS, 1969, 15 (07) : 229 - +

[1] BLUM SE, 1969, J ELECTROCHEM SOC, V115, P324

[2] COMPOSITION DEPENDENCE OF GA1-XALXAS DIRECT AND INDIRECT ENERGY GAPS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) : 4910 - &

[3] RADIATIVE RECOMBINATION FROM GAAS DIRECTLY EXCITED BY ELECTRON BEAMS [J]. SOLID STATE COMMUNICATIONS, 1964, 2 (11) : 353 - 358

[4] INTRABAND AND INTERBAND FREE-CARRIER ABSORPTION AND FUNDAMENTAL ABSORPTION EDGE IN N-TYPE INP [J]. PHYSICAL REVIEW B, 1970, 1 (12): : 4668 - &

[5] UBER DAS AIP - DARSTELLUNG, ELEKTRISCHE UND OPTISCHE EIGENSCHAFTEN [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (3-4) : 302 - 309

[6] ELECTROLUMINESCENCE OF DIFFUSED GAAS1-XPX DIODES WITH LOW DONOR CONCENTRATIONS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (04) : 1830 - &

[7] BAND STRUCTURE AND DIRECT TRANSITION ELECTROLUMINESCENCE IN IN1-XGAXP ALLOYS [J]. APPLIED PHYSICS LETTERS, 1968, 13 (12) : 421 - &

[8] FUNDAMENTAL ABSORPTION EDGE OF AIAS AND AIP [J]. SOLID STATE COMMUNICATIONS, 1970, 8 (09) : 693 - &

[9] REUTER W, PRIVATE COMMUNICATIO

[10] GAP RED ELECTROLUMINESCENT DIODES WITH AN EXTERNAL QUANTUM EFFICIENCY OF 7 PERCENT [J]. APPLIED PHYSICS LETTERS, 1969, 15 (07) : 229 - +