RAMAN-SCATTERING IN (ALXGA1-X)0.51IN0.49P QUATERNARY ALLOYS

[1] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAIP VISIBLE LASER-DIODES OPERATING AT 0.66-0.68 MU-M AT ROOM TEMPERATURES [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 6958 - 6964

[2] GAXIN1-XP LIQUID-PHASE EPITAXIAL-GROWTH ON (100) GAAS SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6849 - 6851

[3] BASERMAN R, 1976, SOLID STATE COMMUN, V20, P485

[4] OPTICAL-PROPERTIES OF ALXIN1-XP GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J]. APPLIED PHYSICS LETTERS, 1987, 50 (10) : 615 - 617

[5] STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 367 - 373

[6] CONTINUOUS WAVE OPERATION (77-K) OF YELLOW (583.6 NM) EMITTING ALGALNP DOUBLE HETEROSTRUCTURE LASER-DIODES [J]. APPLIED PHYSICS LETTERS, 1986, 48 (09) : 557 - 558

[7] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF AN ALGAINP MESA STRIPE LASER [J]. APPLIED PHYSICS LETTERS, 1986, 48 (02) : 89 - 91

[8] ISIKAWA M, 1986, APPL PHYS LETT, V48, P207

[9] RAMAN INVESTIGATION OF ANHARMONICITY AND DISORDER-INDUCED EFFECTS IN GA1-XALXAS EPITAXIAL LAYERS [J]. PHYSICAL REVIEW B, 1981, 24 (12): : 7194 - 7205

[10] EVIDENCE BY RAMAN-SCATTERING ON IN1-XGAXASYP1-Y OF THE 2-MODE BEHAVIOR OF IN1-XGAXP [J]. SOLID STATE COMMUNICATIONS, 1984, 49 (01) : 95 - 98

[1] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAIP VISIBLE LASER-DIODES OPERATING AT 0.66-0.68 MU-M AT ROOM TEMPERATURES [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 6958 - 6964

[2] GAXIN1-XP LIQUID-PHASE EPITAXIAL-GROWTH ON (100) GAAS SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6849 - 6851

[3] BASERMAN R, 1976, SOLID STATE COMMUN, V20, P485

[4] OPTICAL-PROPERTIES OF ALXIN1-XP GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J]. APPLIED PHYSICS LETTERS, 1987, 50 (10) : 615 - 617

[5] STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 367 - 373

[6] CONTINUOUS WAVE OPERATION (77-K) OF YELLOW (583.6 NM) EMITTING ALGALNP DOUBLE HETEROSTRUCTURE LASER-DIODES [J]. APPLIED PHYSICS LETTERS, 1986, 48 (09) : 557 - 558

[7] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF AN ALGAINP MESA STRIPE LASER [J]. APPLIED PHYSICS LETTERS, 1986, 48 (02) : 89 - 91

[8] ISIKAWA M, 1986, APPL PHYS LETT, V48, P207

[9] RAMAN INVESTIGATION OF ANHARMONICITY AND DISORDER-INDUCED EFFECTS IN GA1-XALXAS EPITAXIAL LAYERS [J]. PHYSICAL REVIEW B, 1981, 24 (12): : 7194 - 7205

[10] EVIDENCE BY RAMAN-SCATTERING ON IN1-XGAXASYP1-Y OF THE 2-MODE BEHAVIOR OF IN1-XGAXP [J]. SOLID STATE COMMUNICATIONS, 1984, 49 (01) : 95 - 98