STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE

被引：208

作者：

GOMYO, A ^{[1
]}

KOBAYASHI, K ^{[1
]}

KAWATA, S ^{[1
]}

HINO, I ^{[1
]}

SUZUKI, T ^{[1
]}

YUASA, T ^{[1
]}

机构：

[1] OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 77卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90325-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：367 / 373

页数：7

共 24 条

[1] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAIP ON (100) GAAS
ASAHI, H
KAWAMURA, Y
NAGAI, H
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 4928 - 4931
[2] GAXIN1-XP LIQUID-PHASE EPITAXIAL-GROWTH ON (100) GAAS SUBSTRATES
ASAI, H
OE, K
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6849 - 6851
[3] RAMAN DETECTION OF PHONON-PHONON COUPLING IN GAXIN1-XP
BESERMAN, R
HIRLIMANN, C
BALKANSKI, M
CHEVALLIER, J
[J]. SOLID STATE COMMUNICATIONS, 1976, 20 (05) : 485 - 488
[4] GAAS1-XSBX GROWTH BY OMVPE
CHERNG, MJ
COHEN, RM
STRINGFELLOW, GB
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (05) : 799 - 813
[5] COATES GE, 1956, ORGANOMETALLIC COMPO, P84
[6] MOCVD GROWTH OF (ALXGA1-X)YIN1-YP AND DOUBLE HETEROSTRUCTURES FOR VISIBLE-LIGHT LASERS
HINO, I
SUZUKI, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 483 - 489
[7] ROOM-TEMPERATURE PULSED OPERATION OF ALGALNP GALNP ALGALNP DOUBLE HETEROSTRUCTURE VISIBLE-LIGHT LASER-DIODES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
HINO, I
GOMYO, A
KOBAYASHI, K
SUZUKI, T
NISHIDA, K
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (11) : 987 - 989
[8] OMVPE GROWTH OF GAINP
HSU, CC
COHEN, RM
STRINGFELLOW, GB
[J]. JOURNAL OF CRYSTAL GROWTH, 1983, 62 (03) : 648 - 650
[9] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF AN ALGAINP MESA STRIPE LASER
IKEDA, M
NAKANO, K
MORI, Y
KANEKO, K
WATANABE, N
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (02) : 89 - 91
[10] ROOM-TEMPERATURE CW OPERATION OF INGAP/INGAAIP VISIBLE-LIGHT LASER-DIODES ON GAAS SUBSTRATES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
ISHIKAWA, M
OHBA, Y
SUGAWARA, H
YAMAMOTO, M
NAKANISI, T
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (03) : 207 - 208

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