MOCVD GROWTH OF (ALXGA1-X)YIN1-YP AND DOUBLE HETEROSTRUCTURES FOR VISIBLE-LIGHT LASERS

被引：39

作者：

HINO, I

SUZUKI, T

机构：

来源：

关键词：

D O I：

10.1016/0022-0248(84)90454-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：483 / 489

页数：7

共 15 条

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[3] COATES GE, 1956, ORGANOMETALLIC COMPO, P72
[4] Duchemin J.-P., 1979, INST PHYS CONF SE, V45, P10
[5] ENSTROM RE, 1973, I PHYS C SER, V17, P37
[6] ROOM-TEMPERATURE PULSED OPERATION OF ALGALNP GALNP ALGALNP DOUBLE HETEROSTRUCTURE VISIBLE-LIGHT LASER-DIODES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
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GOMYO, A
KOBAYASHI, K
SUZUKI, T
NISHIDA, K
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (11) : 987 - 989
[7] HINO I, 1983, 30TH P SPRING M JAP
[8] 0.66 MU-M ROOM-TEMPERATURE OPERATION OF INGAAIP DH LASER-DIODES GROWN BY MBE
KAWAMURA, Y
ASAHI, H
NAGAI, H
IKEGAMI, T
[J]. ELECTRONICS LETTERS, 1983, 19 (05) : 163 - 165
[9] MORI Y, 1983, 15TH C SOL STAT DEV, P285
[10] CONDUCTION BANDS IN INL-XALXP
ONTON, A
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[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) : 4205 - &