OPTICAL PROPERTIES OF EXCITONS BOUND TO COPPER-COMPLEX CENTERS IN GALLIUM-ARSENIDE

被引：45

作者：

WILLMANN, F ^{[1
]}

BIMBERG, D ^{[1
]}

BLATTE, M ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPER FORSCH,STUTTGART 7,WEST GERMANY

来源：

PHYSICAL REVIEW B | 1973年 / 7卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.7.2473

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2473 / 2480

页数：8

共 28 条

[1] DOUBLE ACCEPTOR BEHAVIOR OF CU IN TE-DOPED GAAS [J].

ALLISON, HW ;

FULLER, CS .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (08) :2519-&

[2]

[Anonymous], 1960, GROUP THEORY QUANTUM

[3] PHOTON COUNTING APPARATUS FOR KINETIC AND SPECTRAL MEASUREMENTS [J].

BACHRACH, RZ .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1972, 43 (05) :734-&

[4] THERMAL DISSOCIATION OF EXCITONS BOUNDS TO NEUTRAL ACCEPTORS IN HIGH-PURITY GAAS [J].

BIMBERG, D ;

SONDERGELD, M ;

GROBE, E .

PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (10) :3451-+

[5]

Bimberg D., 1970, Journal of Luminescence, V3, P175, DOI 10.1016/0022-2313(71)90055-X

[6]

BIMBERG D, 1972, B AM PHYS SOC, V17, P325

[7] NONHYDROGENIC EXCITON AND ENERGY-GAP OF GAAS [J].

BIMBERG, D ;

SCHAIRER, W .

PHYSICAL REVIEW LETTERS, 1972, 28 (07) :442-&

[8]

BIMBERG D, 1972, 11TH P INT C PHYS SE, P157

[9] PHOTOLUMINESCENCE OF AG-DOPED P-TYPE GAAS [J].

BLATTE, M ;

SCHAIRER, W ;

WILLMANN, F .

SOLID STATE COMMUNICATIONS, 1970, 8 (16) :1265-&

[10]

BLATTE M, 1971, OPT COMMUN, V4, P178

← 1 2 3 →