MICROSTRUCTURE FABRICATION IN ELECTRONIC DEVICES

被引:6
作者
DEAL, BE
CROSSLEY, PA
机构
来源
ANNUAL REVIEW OF MATERIALS SCIENCE | 1981年 / 11卷
关键词
D O I
10.1146/annurev.ms.11.080181.001541
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:321 / 351
页数:31
相关论文
共 70 条
[1]  
AGAJANIAN AH, 1976, SEMICONDUCTOR DEVICE
[2]   1 MU-M MOSFET VLSI TECHNOLOGY .8. RADIATION EFFECTS [J].
AITKEN, JM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :372-379
[3]   MODELS FOR COMPUTER-SIMULATION OF COMPLETE IC FABRICATION PROCESS [J].
ANTONIADIS, DA ;
DUTTON, RW .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) :412-422
[4]   OXIDATION-ENHANCED DIFFUSION OF ARSENIC AND PHOSPHORUS IN NEAR-INTRINSIC [100] SILICON [J].
ANTONIADIS, DA ;
LIN, AM ;
DUTTON, RW .
APPLIED PHYSICS LETTERS, 1978, 33 (12) :1030-1033
[5]  
ARCESI JA, 1973, KODAK MICROELECTRON
[6]   IMPURITY REDISTRIBUTION AND JUNCTION FORMATION IN SILICON BY THERMAL OXIDATION [J].
ATALLA, MM ;
TANNENBAUM, E .
BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (04) :933-946
[7]   THE TRANSISTOR, A SEMI-CONDUCTOR TRIODE [J].
BARDEEN, J ;
BRATTAIN, WH .
PHYSICAL REVIEW, 1948, 74 (02) :230-231
[8]  
BLOEM J, 1977, SEMICONDUCTOR SILICO, P201
[9]  
Collins R. H., 1970, [No title captured], Patent No. [US 3549368, 3549368]
[10]  
d'Heurle F. M., 1978, Thin films. Interdiffusion and reactions, P243