EFFECTS OF DEGRADATION-INDUCED ABSORPTION IN GAAS-DHS LASER-DIODES

被引：6

作者：

SCHICKETANZ, D ^{[1
]}

WITTMANN, J ^{[1
]}

ZEIDLER, G ^{[1
]}

机构：

[1] SIEMENS AG, FORSCH LAB, D-8000 MUNICH 70, WEST GERMANY

来源：

ELECTRONICS LETTERS | 1974年 / 10卷 / 13期

关键词：

D O I：

10.1049/el:19740199

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：252 / 253

页数：2

相关论文

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NATHAN, MI
[J]. APPLIED PHYSICS LETTERS, 1965, 6 (06) : 101 - &
[5] PAOLI TL, 1973, J APPL PHYS, V44, P4103
[6] DEFECT STRUCTURE INTRODUCED DURING OPERATION OF HETEROJUNCTION GAAS LASERS
PETROFF, P
HARTMAN, RL
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (08) : 469 - 471
[7] ROESS D, 1969, LASERS LIGHT AMPLIFI