BREAKDOWN VOLTAGES OF STEP JUNCTIONS IN SILICON

[1] IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J]. PHYSICAL REVIEW, 1964, 134 (3A): : A761 - +

[2] DETERMINATION OF AVALANCHE BREAKDOWN IN PN JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (10) : 1613 - 1614

[3] CHARGE MULTIPLICATION IN SILICON P-N JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 147 - 157

[4] WUL BM, 1958, SOLID STATE PHYSICS, V1, P1491

[1] IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J]. PHYSICAL REVIEW, 1964, 134 (3A): : A761 - +

[2] DETERMINATION OF AVALANCHE BREAKDOWN IN PN JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (10) : 1613 - 1614

[3] CHARGE MULTIPLICATION IN SILICON P-N JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 147 - 157

[4] WUL BM, 1958, SOLID STATE PHYSICS, V1, P1491