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ANOMALOUS LUMINESCENCE NEAR THE INGAASP-INP HETEROJUNCTION INTERFACE

被引：19
作者：
FUKUI, T
HORIKOSHI, Y
机构：
[1] Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Tokyo
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1979年 / 18卷 / 05期
关键词：
D O I：
10.1143/JJAP.18.961
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electroluminescence and photoluminescence of InGaAsP in InGaAsP InP double heterostructure wafers were investigated in connection with the distance from the heteroepitaxial interface. A sharp electroluminescence spectrum was obtained when the p-n junction was located at the InGaAsP/InP interface. On the other hand, broad emission was observed for the p-n junction located at the InP/InGaAsP interface. In the photoluminescence of InGaAsP measured at 4.2 K, strong, deep level emission was observed in the vicinity of the InP/InGaAsP interface. This phenomenon seems to be responsible for the broad electroluminescence spectrum. © 1979 IOP Publishing Ltd.
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页码：961 / 965
页数：5
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