NEW LIQUID-PHASE EPITAXIAL-GROWTH METHOD FOR GROWTH OF (ALGA)AS, GAAS MULTILAYERS

被引:21
作者
HORIKOSHI, Y [1 ]
机构
[1] NIPPON TELEGRAPH & TEL PUBL CORP MUSASHINO ELECT COMMUN LAB,MUSASHNO,TOKYO,JAPAN
关键词
D O I
10.1143/JJAP.15.887
中图分类号
O59 [应用物理学];
学科分类号
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页码:887 / 888
页数:2
相关论文
共 4 条
[1]  
Alferov Zh. I., 1975, Kristall und Technik, V10, P103, DOI 10.1002/crat.19750100205
[2]   EPITAXIAL-GROWTH OF (ALGA)AS AND GAAS ON (ALGA)AS SUBSTRATE [J].
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[3]   REPRODUCIBLE LIQUID-PHASE-EPITAXIAL GROWTH OF DOUBLE HETEROSTRUCTURE GAAS-ALXGA1-XAS LASER-DIODES [J].
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[4]   GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE LASERS-EFFECT OF DOPING ON LASING CHARACTERISTICS OF GAAS [J].
PINKAS, E ;
HAYASHI, I ;
MILLER, BI ;
FOY, PW .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) :2827-&