NUCLEATION AND MORPHOLOGY CONTROL IN SEMICONDUCTOR AIBIIIXVI2 TYPE CRYSTALS GROWN BY CLOSED-TUBE CVD

Crystals of AIBIIIX2VI compounds can be successfully grown by chemical vapour deposition. By using this crystal growth method it is very important to reduce both primary nucleation and dendritic patterns. With this in mind two possible methods were described which are expected to give the best results. A discussion is further reported on some criteria for reducing the dendritic formations due to instability of the solid-vapour interface during the growth process. On the basis of these conclusions some improvements in the growth apparatus are proposed. © 1979.