DISSOCIATION OF DISLOCATIONS IN SILICON

[1] STACKING FAULT ENERGY IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (10) : 3078 - &

[2] Alexander H., 1969, SOLID STATE PHYS, V22, P27, DOI DOI 10.1016/S0081-1947(08)60031-4

[3] CRYSTALLOGRAPHIC IMPERFECTIONS IN SILICON [J]. DISCUSSIONS OF THE FARADAY SOCIETY, 1964, (38): : 298 - &

[4] OBSERVATIONS ON DISLOCATION NODES IN SILICON [J]. PHILOSOPHICAL MAGAZINE, 1965, 11 (114): : 1315 - &

[5] CRYSTALLOGRAPHIC IMPERFECTIONS IN EPITAXIALLY GROWN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) : 3281 - &

[6] METHOD OF PREPARING SI AND GE SPECIMENS FOR EXAMINATION BY TRANSMISSION ELECTRON MICROSCOPY [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1962, 13 (09): : 446 - &

[7] BROWN LM, 1964, DISCUSS FARADAY SOC, P35

[8] INVESTIGATIONS OF DISLOCATION STRAIN FIELDS USING WEAK BEAMS [J]. PHILOSOPHICAL MAGAZINE, 1969, 20 (168): : 1265 - &

[9] COCKAYNE DJH, 1970, 7 P INT C EL MICR GR, V2, P277

[10] COCKAYNE DJH, 1970, THESIS OXFORD U

[1] STACKING FAULT ENERGY IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (10) : 3078 - &

[2] Alexander H., 1969, SOLID STATE PHYS, V22, P27, DOI DOI 10.1016/S0081-1947(08)60031-4

[3] CRYSTALLOGRAPHIC IMPERFECTIONS IN SILICON [J]. DISCUSSIONS OF THE FARADAY SOCIETY, 1964, (38): : 298 - &

[4] OBSERVATIONS ON DISLOCATION NODES IN SILICON [J]. PHILOSOPHICAL MAGAZINE, 1965, 11 (114): : 1315 - &

[5] CRYSTALLOGRAPHIC IMPERFECTIONS IN EPITAXIALLY GROWN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) : 3281 - &

[6] METHOD OF PREPARING SI AND GE SPECIMENS FOR EXAMINATION BY TRANSMISSION ELECTRON MICROSCOPY [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1962, 13 (09): : 446 - &

[7] BROWN LM, 1964, DISCUSS FARADAY SOC, P35

[8] INVESTIGATIONS OF DISLOCATION STRAIN FIELDS USING WEAK BEAMS [J]. PHILOSOPHICAL MAGAZINE, 1969, 20 (168): : 1265 - &

[9] COCKAYNE DJH, 1970, 7 P INT C EL MICR GR, V2, P277

[10] COCKAYNE DJH, 1970, THESIS OXFORD U