PLASMA EDGE REFLECTION STUDY OF CONDUCTION-BAND EFFECTIVE MASS IN N-TYPE SILICON

被引：2

作者：

GOPAL, V ^{[1
]}

机构：

[1] SOLID STATE PHYS LAB,DELHI,INDIA

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1973年 / 57卷 / 01期

关键词：

D O I：

10.1002/pssb.2220570160

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：K69 / K72

页数：4

共 10 条

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[3]

KUKHARSKII AA, 1970, SOV PHYS SEMICOND+, V4, P234

[4] USE OF PLASMA EDGE REFLECTION MEASUREMENTS IN STUDY OF SEMICONDUCTORS [J].

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[5]

REIMANN PL, 1971, PHYS STATUS SOLIDI B, V48, P161

[6] EFFECT OF ENERGY DISTRIBUTION IN SEMICONDUCTOR CHARGE-CARRIERS ON EFFECTIVE MASS DETERMINATION FROM INFRARED PLASMA REFLECTION [J].

RHEINLANDER, B .

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[7] COMPARISON OF CLASSICAL APPROXIMATIONS TO FREE CARRIER ABSORPTION IN SEMICONDUCTORS [J].

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PHILLIPS, RP .

SOLID-STATE ELECTRONICS, 1967, 10 (09) :943-&

[8] DETERMINATION OF OPTICAL CONSTANTS AND CARRIER EFFECTIVE MASS OF SEMICONDUCTORS [J].

SPITZER, WG ;

FAN, HY .

PHYSICAL REVIEW, 1957, 106 (05) :882-890

[9] CYCLOTRON RESONANCE OF ELECTRONS IN SILICON AT TEMPERATURES UP TO 200 DEGREES K [J].

STRADLIN.RA ;

ZHUKOV, VV .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1966, 87 (555P) :263-&

[10] CONDUCTION BAND EFFECTIVE MASS IN N-TYPE SILICON [J].

WALTON, AK ;

REIMANN, PL .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1970, 3 (06) :1410-&

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