CONDUCTION BAND EFFECTIVE MASS IN N-TYPE SILICON

被引：22

作者：

WALTON, AK

REIMANN, PL

机构：

来源：

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS | 1970年 / 3卷 / 06期

关键词：

D O I：

10.1088/0022-3719/3/6/023

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

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页码：1410 / &

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共 15 条

[1] THE PREPARATION OF VERY FLAT SURFACES OF SILICON BY ELECTROPOLISHING
BAKER, D
TILLMAN, JR
[J]. SOLID-STATE ELECTRONICS, 1963, 6 (06) : 589 - &
[2] CYCLOTRON RESONANCE OF ELECTRONS AND HOLES IN SILICON AND GERMANIUM CRYSTALS
DRESSELHAUS, G
KIP, AF
KITTEL, C
[J]. PHYSICAL REVIEW, 1955, 98 (02): : 368 - 384
[3] DIE MAGNETISCHE SUSZEPTIBILITAT UND EFFEKTIVE MASSE DER LADUNGSTRAGER IN SILIZIUM UND GERMANIUM
GEIST, D
[J]. NATURWISSENSCHAFTEN, 1958, 45 (02) : 33 - 34
[4] THE HALL COEFFICIENT OF SEMICONDUCTORS
JONES, H
[J]. PHYSICAL REVIEW, 1951, 81 (01): : 149 - 149
[5] MADELUNG O, 1964, PHYSICS 3 5 COMPOUND, P87
[6] MAGNETO-OPTICAL EFFECTS IN SEMICONDUCTORS
MOSS, TS
[J]. PHYSICA STATUS SOLIDI, 1962, 2 (06): : 601 - 622
[7] Paul W, 1960, HELV PHYS ACTA, V33, P329
[8] BAND STRUCTURE OF SILICON, GERMANIUM, AND RELATED SEMICONDUCTORS
PHILLIPS, JC
[J]. PHYSICAL REVIEW, 1962, 125 (06): : 1931 - &
[9] INFRARED REFRACTIVE INDEXES OF SILICON GERMANIUM AND MODIFIED SELENIUM GLASS
SALZBERG, CD
VILLA, JJ
[J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1957, 47 (03) : 244 - 246
[10] SMITH RA, 1959, SEMICONDUCTORS, P120